Characterization of an Au/n-Si photovoltaic structure with an organic thin film

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dc.authoridIlhan, Salih/0000-0003-0779-2744
dc.authoridtemel, hamdi/0000-0001-9225-7425
dc.contributor.authorOzaydin, C.
dc.contributor.authorAkkilic, K.
dc.contributor.authorIlhan, S.
dc.contributor.authorRuzgar, S.
dc.contributor.authorGullu, O.
dc.contributor.authorTemel, H.
dc.date.accessioned2024-12-24T19:27:31Z
dc.date.available2024-12-24T19:27:31Z
dc.date.issued2013
dc.departmentSiirt Üniversitesi
dc.description.abstractWe demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipTurkish of Prime Ministry State Planning Organization (DPT) [2010BKV1285]; Dicle University [DUBAP 10-ZEF-126]
dc.description.sponsorshipThis work is partly supported by Turkish of Prime Ministry State Planning Organization (DPT) (Project number: 2010BKV1285, Project Title: Batman Universitesi Merkezi Laboratuvarinin Kurulmasi) and Dicle University Research Project Found (Project number: DUBAP 10-ZEF-126).
dc.identifier.doi10.1016/j.mssp.2013.03.002
dc.identifier.endpage1130
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84878856140
dc.identifier.scopusqualityQ1
dc.identifier.startpage1125
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2013.03.002
dc.identifier.urihttps://hdl.handle.net/20.500.12604/6679
dc.identifier.volume16
dc.identifier.wosWOS:000321087600011
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectDevices
dc.subjectSchottky barrier
dc.subjectOrganics
dc.subjectSurfaces and interfaces
dc.titleCharacterization of an Au/n-Si photovoltaic structure with an organic thin film
dc.typeArticle

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