Characterization of an Au/n-Si photovoltaic structure with an organic thin film
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Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.
Açıklama
Anahtar Kelimeler
Devices, Schottky barrier, Organics, Surfaces and interfaces
Kaynak
Materials Science in Semiconductor Processing
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
16
Sayı
4
