Polyoxometalate-Doped Hole Transport Layer to Boost Performance of MaPbI<sub>3</sub>-Based Inverted-Type Perovskite Solar Cells
| dc.contributor.author | Sumeyra Buyukcelebi | |
| dc.contributor.author | Mehmet Kazici | |
| dc.contributor.author | Yasemin Torlak | |
| dc.contributor.author | Mahmut Kus | |
| dc.contributor.author | Mustafa Ersoz | |
| dc.date.accessioned | 2025-02-25T08:26:49Z | |
| dc.date.available | 2025-02-25T08:26:49Z | |
| dc.date.issued | 2025-02-13 | |
| dc.department | Fakülteler, Mühendislik Fakültesi, Elektrik Elektronik Mühendisliği Bölümü | |
| dc.description.abstract | This study delves into the examination of the efficiency, stability, and repeatability of perovskite solar cells (PSCs), a focal point in contemporary photovoltaic (PV) technologies. The aim is to address the challenges encountered in PSCs. To achieve this goal, Ge-doped polyoxometalate, a structure of significance in recent molecular electronics, was employed as a dopant in the hole transport layer (HTL). The study investigated alterations in the conductivity, improvements in efficiency, and changes in PV parameters. The utilization of PEDOT/PSS doped with a maximum of 2% GePOM resulted in an average efficiency increase of 27% in PSCs compared with the reference. Moreover, enhancements in stability and repeatability were also noted. Comparatively, the reference PSC operated at an efficiency of 11.18%, while PSCs incorporating 2% GePOM into PEDOT/PSS as the HTL exhibited a notable increase in the efficiency, reaching 14.22%. Furthermore, the champion device exhibited an observed fill factor value of 0.74, a short-circuit current density (Jsc) value of 19.78 mA/cm2, and an open-circuit voltage (Voc) value of 0.98 V. Consequently, noteworthy enhancements have been noticed in the PV parameters of PSCs with the introduction of GePOM doping. © 2025 The Authors. Published by American Chemical Society. | |
| dc.identifier.citation | Buyukcelebi, S., Kazici, M., Torlak, Y., Kus, M., & Ersoz, M. (2025). Polyoxometalate-Doped Hole Transport Layer to Boost Performance of MaPbI3-Based Inverted-Type Perovskite Solar Cells. ACS Omega. | |
| dc.identifier.doi | 10.1021/acsomega.4c01242 | |
| dc.identifier.issn | 2470-1343 | |
| dc.identifier.issn | 2470-1343 | |
| dc.identifier.scopus | 2-s2.0-85217892378 | |
| dc.identifier.scopusquality | Q2 | |
| dc.identifier.uri | https://doi.org/10.1021/acsomega.4c01242 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12604/8536 | |
| dc.indekslendigikaynak | Scopus | |
| dc.institutionauthor | Kazıcı, Mehmet | |
| dc.language.iso | en | |
| dc.publisher | American Chemical Society (ACS) | |
| dc.relation.ispartof | ACS Omega | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.title | Polyoxometalate-Doped Hole Transport Layer to Boost Performance of MaPbI<sub>3</sub>-Based Inverted-Type Perovskite Solar Cells | |
| dc.type | journal-article |
