Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode

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dc.authoridOcak, Yusuf Selim/0000-0001-8754-1720
dc.authoridIlhan, Salih/0000-0003-0779-2744
dc.authoridtemel, hamdi/0000-0001-9225-7425
dc.contributor.authorAkkilic, K.
dc.contributor.authorOcak, Y. S.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorIlhan, S.
dc.contributor.authorTemel, H.
dc.date.accessioned2024-12-24T19:25:23Z
dc.date.available2024-12-24T19:25:23Z
dc.date.issued2010
dc.departmentSiirt Üniversitesi
dc.description.abstractIn this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.cap.2009.06.019
dc.identifier.endpage341
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue1
dc.identifier.scopus2-s2.0-69249221323
dc.identifier.scopusqualityQ2
dc.identifier.startpage337
dc.identifier.urihttps://doi.org/10.1016/j.cap.2009.06.019
dc.identifier.urihttps://hdl.handle.net/20.500.12604/6393
dc.identifier.volume10
dc.identifier.wosWOS:000270584900064
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectOrganic-inorganic semiconductor contact
dc.subjectSchottky diode
dc.subjectIdeality factor
dc.subjectBarrier height
dc.titleCalculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
dc.typeArticle

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