Group preserving scheme and reproducing kernel method for the Poisson-Boltzmann equation for semiconductor devices

Basit Öğe Kaydı
dc.authoridHashemi, Mir Sajjad/0000-0002-5529-3125
dc.contributor.authorAkgul, Ali
dc.contributor.authorInc, Mustafa
dc.contributor.authorHashemi, Mir Sajjad
dc.date.accessioned2024-12-24T19:24:43Z
dc.date.available2024-12-24T19:24:43Z
dc.date.issued2017
dc.departmentSiirt Üniversitesi
dc.description.abstractThis paper introduces that the nonlinear Poisson-Boltzmann equation for semiconductor devices describing potential distribution in a double-gate metal oxide semiconductor field effect transistor (DG-MOSFET) is exactly solvable. The DG-MOSFET shows one of the most advanced device structures in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry. Lie symmetry properties of this model is investigated in order to extract some exact solutions. The reproducing kernel Hilbert space method and group preserving scheme also have been applied to the nonlinear equation. Numerical results show that the present methods are very effective.
dc.identifier.doi10.1007/s11071-017-3414-4
dc.identifier.endpage2829
dc.identifier.issn0924-090X
dc.identifier.issn1573-269X
dc.identifier.issue4
dc.identifier.scopus2-s2.0-85013220046
dc.identifier.scopusqualityQ1
dc.identifier.startpage2817
dc.identifier.urihttps://doi.org/10.1007/s11071-017-3414-4
dc.identifier.urihttps://hdl.handle.net/20.500.12604/6110
dc.identifier.volume88
dc.identifier.wosWOS:000402399500035
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofNonlinear Dynamics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectGroup preserving scheme
dc.subjectPoisson-Boltzmann equation
dc.subjectReproducing kernel method
dc.subjectLie symmetry analysis
dc.titleGroup preserving scheme and reproducing kernel method for the Poisson-Boltzmann equation for semiconductor devices
dc.typeArticle

Dosyalar

Koleksiyon

WOS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu