Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

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dc.authoridALTUNTAS, ISMAIL/0000-0002-3979-7868
dc.authoridGur, Emre/0000-0002-3606-2751
dc.contributor.authorAltuntas, Ismail
dc.contributor.authorKocak, Merve Nur
dc.contributor.authorYolcu, Gamze
dc.contributor.authorBudak, Hasan Feyzi
dc.contributor.authorKasapoglu, A. Emre
dc.contributor.authorHoroz, Sabit
dc.contributor.authorGur, Emre
dc.date.accessioned2024-12-24T19:27:31Z
dc.date.available2024-12-24T19:27:31Z
dc.date.issued2021
dc.departmentSiirt Üniversitesi
dc.description.abstractIn the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were investigated by secondary ion mass spectroscopy (SIMS). It was observed that O and Si concentration change with growth temperature of epilayers as well as the interface significantly. HRXRD (high-resolution x-ray diffraction) analyses showed that the highest growth temperature results with the lowest full width at half maximum (FWHM) value for both ? scans. Scanning electron microscope (SEM) and atomic force microscopy (AFM) analyses indicated that relatively low growth temperature grown samples gave rise to 2D-like growth mode with openings while increased growth temperature resulted in change the growth mode to a columnar mode with increasing V-shape pits because of the increasing diffusion coefficient of O impurities and Si atoms in AlN epilayers.
dc.description.sponsorshipTUBITAK-The Scientific and Technological Research Council of Turkey [117F339, 118F425]; Scientific Research Project Fund of Sivas Cumhuriyet University [M-772]
dc.description.sponsorshipThe authors acknowledge the usage of the Nanophotonics Research and Application Center at Sivas Cumhuriyet University (CUNAM) facilities. This work is supported by the TUBITAK-The Scientific and Technological Research Council of Turkey, under project numbers 117F339, 118F425 and supported by the Scientific Research Project Fund of Sivas Cumhuriyet University under the project number M-772.
dc.identifier.doi10.1016/j.mssp.2021.105733
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85100259040
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2021.105733
dc.identifier.urihttps://hdl.handle.net/20.500.12604/6680
dc.identifier.volume127
dc.identifier.wosWOS:000633206500002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectAlN
dc.subjectMOVPE
dc.subjectDiffusion
dc.subjectPALE
dc.titleInfluence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
dc.typeArticle

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