Determination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements

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dc.contributor.authorNar, S.
dc.contributor.authorSahin, O.
dc.contributor.authorHoroz, S.
dc.date.accessioned2024-12-24T19:10:03Z
dc.date.available2024-12-24T19:10:03Z
dc.date.issued2018
dc.departmentSiirt Üniversitesi
dc.description.abstractIn this present study, Ni-doped Sb2S3 thin films with different Ni concentrations were synthesized on Zn2SnO4 coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25%, 0.5%, 0.75%, and 1%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn2SnO4 /Ni-doped Sb2S3 thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb2S3 thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb2S3: Ni(0.75%) thin film has the highest IPCE (%) and power conversion efficiency values compare to other Ni concentrations. © 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştirma Kurumu, TÜBITAK, (117F193)
dc.identifier.endpage497
dc.identifier.issn1584-8663
dc.identifier.issue10
dc.identifier.scopus2-s2.0-85056348079
dc.identifier.scopusqualityQ3
dc.identifier.startpage491
dc.identifier.urihttps://hdl.handle.net/20.500.12604/3925
dc.identifier.volume15
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherS.C. Virtual Company of Phisics S.R.L
dc.relation.ispartofChalcogenide Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectCharacterization
dc.subjectDoping
dc.subjectPhotovoltaic
dc.subjectSynthesis
dc.subjectThin film
dc.titleDetermination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements
dc.typeArticle

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