Experimental frequency analysis of p and n-type semiconductor barriers in SBD system

Basit Öğe Kaydı
dc.authoridsolmaz, Ramazan/0000-0001-8933-2922
dc.contributor.authorSolmaz, Ramazan
dc.contributor.authorHansu, Fevzi
dc.date.accessioned2024-12-24T19:27:47Z
dc.date.available2024-12-24T19:27:47Z
dc.date.issued2020
dc.departmentSiirt Üniversitesi
dc.description.abstractAn experimental study was conducted to analyze the behavior of semiconductor materials in a variable strong electrical field medium, the effect of semiconductor barriers on the formation and development of the discharge, the barrier effect of semiconductor materials and the frequency response of Semiconductor Barrier Discharge (SBD) system. Applications were carried out in vacuum, air and nitrogen medium separately with randomly selected frequency values. It was seen from the first stage results that the barrier effect of the semiconductor layers on the current oscillations is quite striking in the vacuum medium. As the frequency of the applied voltage increases, the barrier effect of the semiconductor layers was seen to reduce. Besides, as the frequency values increase, the discharge current was determined to get more linear. In the second stage, the results have shown that the SBD operated with the AC voltage characterizes the structure of a band-stop filter. The frequency of the voltage applied to the SBD system and the design of the reactor determine the frequency at which the discharge current was suppressed. Knowing these new features of SBD effects on semiconductors, give an important contribution to the design of the semiconductor production industry.
dc.identifier.doi10.1016/j.vacuum.2020.109605
dc.identifier.issn0042-207X
dc.identifier.issn1879-2715
dc.identifier.scopus2-s2.0-85089497152
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2020.109605
dc.identifier.urihttps://hdl.handle.net/20.500.12604/6799
dc.identifier.volume181
dc.identifier.wosWOS:000580600700014
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofVacuum
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectBarrier discharge
dc.subjectFrequency analysis
dc.subjectSemiconductor layer
dc.subjectSemiconductor production
dc.titleExperimental frequency analysis of p and n-type semiconductor barriers in SBD system
dc.typeArticle

Dosyalar

Koleksiyon

WOS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu