Experimental Analysis of Current Oscillations of Semiconductor Barrier Discharge

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dc.authoridsolmaz, Ramazan/0000-0001-8933-2922
dc.contributor.authorSolmaz, Ramazan
dc.contributor.authorHansu, Fevzi
dc.date.accessioned2024-12-24T19:28:34Z
dc.date.available2024-12-24T19:28:34Z
dc.date.issued2020
dc.departmentSiirt Üniversitesi
dc.description.abstractIn this study, experimental analysis of current oscillations of semiconductor barrier discharge (SBD) was carried out. In tests, the current oscillations of semiconductor barriers under various strong electric fields in vacuum, air, and nitrogen gas mediums have been investigated. Experiments were carried out by using p- and n-type semiconductor layers, creating single- and double-barrier electrode configurations. In addition, in the study, frequency response of p- and n-type semiconductor layers was investigated in randomly selected 50-, 100-, 200-, 350-, and 500-Hz frequency rates. With the using of experimental data, the voltage-current curves of SBD were created. It was observed that discharge current gives more stable results in Townsend mode. Furthermore, with increasing of test voltage, the discharge passed to the glow mode that contains the formation of unstable current oscillations. When the obtained data were evaluated, it was concluded that medium pressure had a significant effect on the development of SBD at fixed electrode gap. It was seen that current oscillations of semiconductor layers show more stable behavior at low-voltage, low-pressure, and low-frequency values. It has been concluded that electrical breakdown events in semiconductor barriers occur at higher voltage values than the barrier-free system in vacuum medium.
dc.identifier.doi10.1109/TPS.2020.3027958
dc.identifier.endpage3914
dc.identifier.issn0093-3813
dc.identifier.issn1939-9375
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85096129475
dc.identifier.scopusqualityQ2
dc.identifier.startpage3905
dc.identifier.urihttps://doi.org/10.1109/TPS.2020.3027958
dc.identifier.urihttps://hdl.handle.net/20.500.12604/7119
dc.identifier.volume48
dc.identifier.wosWOS:000589269300022
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofIeee Transactions on Plasma Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241222
dc.subjectDischarges (electric)
dc.subjectElectrodes
dc.subjectInductors
dc.subjectOscillators
dc.subjectNitrogen
dc.subjectSemiconductor device measurement
dc.subjectVoltage measurement
dc.subjectCurrent oscillations
dc.subjectsemiconductor analysis
dc.subjectsemiconductor barrier discharge (SBD)
dc.subjectsemiconductor layer
dc.titleExperimental Analysis of Current Oscillations of Semiconductor Barrier Discharge
dc.typeArticle

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