Synthesis of PbS:Mo(3%) thin film and investigation of its properties
[ X ]
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Pure PbS and PbS:Mo(3%) thin films were synthesized on glass substrates at room temperature using the chemical bath deposition (CBD) method. The main purpose of this study is to examine the effect of the Mo additive metal on the crystallite size, optical energy band gap and photovoltaic properties of the PbS semiconductor thin film. Although the structure of PbS:Mo(3%) thin film was the same as the pure PbS, the crystallite size of PbS:Mo(3%) thin film (24.12nm) was found to be lower than that of pure PbS (25.97nm). The band gap values of PbS and PbS:Mo(3%) thin films were obtained as 1.89eV and 1.91eV, respectively. The possible reason for the increase in the energy band gap of PbS:Mo(3%) thin film is the incorporation of Mo6+ ions into the PbS lattice. Photovoltaic properties of PbS and PbS:Mo(3%) thin films synthesized on Zn2SnO4 coated on FTO conductive glasses via CBD technique were investigated using the IPCE and J-V measurements. The IPCE (%) values obtained at 400nm for the pure PbS and PbS:Mo(3%) thin films were 35% and 41%, respectively. The power conversion efficiency () values were obtained as 2.02% and 2.11% for pure PbS and PbS:Mo(3%) thin films, respectively. Thus, it was observed that the doped metal has significantly improved the photovoltaic properties of PbS thin films.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
30
Sayı
8
