Reduction of shunt current in buffer-free IrMn based spin-valve structures

dc.contributor.authorKocaman, Bayram
dc.contributor.authorAkdoğan, Numan
dc.date.accessioned2019-11-20T07:41:43Z
dc.date.available2019-11-20T07:41:43Z
dc.date.issued2018-06-15
dc.departmentBelirleneceken_US
dc.description.abstractThe presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6?nm in order to achieve the lowest shunt current and high blocking temperature (>300?K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.en_US
dc.description.provenanceSubmitted by Bayram Kocaman (bayram.kocaman@siirt.edu.tr) on 2019-11-20T07:41:43Z No. of bitstreams: 1 1-s2.0-S0304885317331475-main.pdf: 1138661 bytes, checksum: 655395dde4edc763b4e1fa963a6889e3 (MD5)en
dc.description.provenanceMade available in DSpace on 2019-11-20T07:41:43Z (GMT). No. of bitstreams: 1 1-s2.0-S0304885317331475-main.pdf: 1138661 bytes, checksum: 655395dde4edc763b4e1fa963a6889e3 (MD5) Previous issue date: 2018-06-15en
dc.identifier.citationCitation Indexes:6en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12604/1733
dc.language.isoenen_US
dc.publisherJournal of Magnetism and Magnetic Materialsen_US
dc.relation.ispartofseriesVolume 456;Pages 17-21
dc.relation.publicationcategoryUluslararası Hakemli Dergi Makalesien_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.snmz#KayıtKontrol#
dc.titleReduction of shunt current in buffer-free IrMn based spin-valve structuresen_US
dc.typeArticleen_US

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