Reduction of shunt current in buffer-free IrMn based spin-valve structures
Yükleniyor...
Tarih
2018-06-15
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Journal of Magnetism and Magnetic Materials
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6?nm in order to achieve the lowest shunt current and high blocking temperature (>300?K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.
Açıklama
Anahtar Kelimeler
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
Sayı
Künye
Citation Indexes:6
