Yazar "Temel, H." seçeneğine göre listele

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    Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
    (Elsevier, 2010) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Ilhan, S.; Temel, H.
    In this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
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    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier Sci Ltd, 2013) Ozaydin, C.; Akkilic, K.; Ilhan, S.; Ruzgar, S.; Gullu, O.; Temel, H.
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.
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    Öğe
    Dynamic 1H NMR Studies of Schiff Base Derivatives
    (Springer, 2016) Koylu, M. Z.; Ekinci, A.; Boyukata, M.; Temel, H.
    The spin-lattice relaxation time T (1) and the spin-spin relaxation time T (2) of two Schiff base derivatives, N,N'-ethylenebis(salicylidene)-1,2-diaminoethane (H2L1) and N,N'-ethylenebis (salicylidene)-1,3-diaminopropane (H2L2), in DMSO-d(6) solvent were studied as a function of temperature in the range of 20-50A degrees C using a Bruker Avance 400.132 MHz H-1 NMR spectrometer. Based on the activation energy (E (a)) and correlation time (tau(c)), we believe that the Schiff base derivatives perform a molecular tumbling motion.