Yazar "Akkilic, K." seçeneğine göre listele

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    Öğe
    Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
    (Elsevier, 2010) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Ilhan, S.; Temel, H.
    In this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
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    Öğe
    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier Sci Ltd, 2013) Ozaydin, C.; Akkilic, K.; Ilhan, S.; Ruzgar, S.; Gullu, O.; Temel, H.
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.
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    Öğe
    Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction
    (Elsevier Science Sa, 2008) Akkilic, K.; Ocak, Y. S.; Ilhan, S.; Kilicoglu, T.
    Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.
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    Öğe
    The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application
    (Pergamon-Elsevier Science Ltd, 2016) Ozaydin, C.; Gullu, O.; Pakma, O.; Ilhan, S.; Akkilic, K.
    In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Phi(b)) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit' voltage of 396 mV and a short circuit current of 33.8 mu A under 300W light. (C) 2016 Elsevier Ltd. All rights reserved.