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    Improving photovoltaic performance of p-i-n perovskite solar cells through FeCl3 doping in the hole transport layer
    (IOP Publishing, 2025-05-14) Mehmet Kazici
    Enhancing charge transport layers is a key approach for improving the photovoltaic performance of perovskite solar cells (PSCs). Doping the hole transport layer (HTL) has emerged as a highly effective method for achieving efficient charge transfer between charge-selective and photoactive layers. In this study, FeCl3, a p-type dopant, was introduced into Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) to improve the charge transfer properties of the HTL in p-i-n type PSCs. The incorporation of FeCl3 significantly boosted the photovoltaic performance of glovebox-free fabricated MAPbI(3)-based PSCs, resulting in an approximately 15% improvement in power conversion efficiency (PCE). This improvement was primarily due to a higher short circuit current density (J(SC)) and an increased fill factor (FF). Morphological and structural analyses demonstrated that FeCl3-doped PEDOT:PSS promotes superior perovskite crystallization and the growth of larger grains. The reduction in grain boundaries and enhanced charge transfer between the perovskite layer and the HTL highlight the critical role of FeCl3 in improving PSC performance.
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    Öğe
    Polyoxometalate-Doped Hole Transport Layer to Boost Performance of MaPbI3-Based Inverted-Type Perovskite Solar Cells
    (American Chemical Society (ACS), 2025-02-13) Sumeyra Buyukcelebi; Mehmet Kazici; Yasemin Torlak; Mahmut Kus; Mustafa Ersoz
    This study delves into the examination of the efficiency, stability, and repeatability of perovskite solar cells (PSCs), a focal point in contemporary photovoltaic (PV) technologies. The aim is to address the challenges encountered in PSCs. To achieve this goal, Ge-doped polyoxometalate, a structure of significance in recent molecular electronics, was employed as a dopant in the hole transport layer (HTL). The study investigated alterations in the conductivity, improvements in efficiency, and changes in PV parameters. The utilization of PEDOT/PSS doped with a maximum of 2% GePOM resulted in an average efficiency increase of 27% in PSCs compared with the reference. Moreover, enhancements in stability and repeatability were also noted. Comparatively, the reference PSC operated at an efficiency of 11.18%, while PSCs incorporating 2% GePOM into PEDOT/PSS as the HTL exhibited a notable increase in the efficiency, reaching 14.22%. Furthermore, the champion device exhibited an observed fill factor value of 0.74, a short-circuit current density (Jsc) value of 19.78 mA/cm2, and an open-circuit voltage (Voc) value of 0.98 V. Consequently, noteworthy enhancements have been noticed in the PV parameters of PSCs with the introduction of GePOM doping. © 2025 The Authors. Published by American Chemical Society.