Yazar "Kilicoglu, T." seçeneğine göre listele

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    Öğe
    Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
    (Elsevier, 2010) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Ilhan, S.; Temel, H.
    In this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
  • [ X ]
    Öğe
    Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction
    (Elsevier Science Sa, 2008) Akkilic, K.; Ocak, Y. S.; Ilhan, S.; Kilicoglu, T.
    Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.