Akkilic, K.Ocak, Y. S.Ilhan, S.Kilicoglu, T.2024-12-242024-12-2420080379-6779https://doi.org/10.1016/j.synthmet.2008.06.018https://hdl.handle.net/20.500.12604/6785Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessOrganic-inorganic semiconductor contactBinuclear Cu(II) complexSchottky diodeArticle15821-24969972Q1WOS:000262573900032Q12-s2.0-5764918433410.1016/j.synthmet.2008.06.018