Kocaman, BayramAkdoğan, Numan2019-11-202019-11-202018-06-15Citation Indexes:6https://hdl.handle.net/20.500.12604/1733The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6?nm in order to achieve the lowest shunt current and high blocking temperature (>300?K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.eninfo:eu-repo/semantics/openAccessArticle